Quantum-Well Bound States in Graphene Heterostructure Interfaces.

Academic Article

Abstract

  • We present experimental evidence of electronic and optical interlayer resonances in graphene van der Waals heterostructure interfaces. Using the spectroscopic mode of a low-energy electron microscope (LEEM), we characterized these interlayer resonant states up to 10 eV above the vacuum level. Compared with nontwisted, AB-stacked bilayer graphene (AB BLG), an ≈0.2  Å increase was found in the interlayer spacing of 30° twisted bilayer graphene (30°-tBLG). In addition, we used Raman spectroscopy to probe the inelastic light-matter interactions. A unique type of Fano resonance was found around the D and G modes of the graphene lattice vibrations. This anomalous, robust Fano resonance is a direct result of quantum confinement and the interplay between discrete phonon states and the excitonic continuum.
  • Authors

  • Dai, Zhongwei
  • Gao, Zhaoli
  • Pershoguba, Sergey S
  • Tiwale, Nikhil
  • Subramanian, Ashwanth
  • Zhang, Qicheng
  • Eads, Calley
  • Tenney, Samuel A
  • Osgood, Richard M
  • Nam, Chang-Yong
  • Zang, Jiadong
  • Johnson, AT Charlie
  • Sadowski, Jerzy T
  • Status

    Publication Date

  • August 20, 2021
  • Has Subject Area

    Published In

    Digital Object Identifier (doi)

    Pubmed Id

  • 34477425
  • Start Page

  • 086805
  • Volume

  • 127
  • Issue

  • 8