FRACTURE-BEHAVIOR OF SILICON CUT WITH A HIGH-POWER LASER

Conference Proceeding

Abstract

  • AbstractThe fracture twist test is used to obtain the statistical fracture strength distribution for 10-cm square single crystal and polycrystalline silicon wafers cut with a high-power Nd:YAG laser. Tensile wafer edge stresses at fracture are calculated using nonlinear finite element analysis, and the model results are used to examine the limitations of linear torsion and plate theories. The basic hypothesis is that fracture strength of laser-cut wafers is limited by microcracks formed by large residual tensile stresses produced in the cut edge upon cooling after cutting. Differences are found between single crystal CZ and polycrystalline EFG silicon material Weibull parameters characterizing the fracture strength distribution. These indicate that there is a statistical influence of material variables on the fracture strength of the EFG silicon, which lowers its strength and increases the variance of fracture response in comparison to single crystal silicon.
  • Authors

  • CHAO, CC
  • CHLEBOSKI, R
  • HENDERSON, EJ
  • HOLMES, CK
  • KALEJS, JP
  • Gross, Todd
  • Status

    Publication Date

  • 1991
  • Keywords

  • Injury (total) Accidents/Adverse Effects
  • Digital Object Identifier (doi)

    International Standard Book Number (isbn) 10

  • 1-55899-120-4
  • Start Page

  • 363
  • End Page

  • 368
  • Volume

  • 226