Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

Academic Article


  • Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm2 (for L=2000 μm) and 75 A/cm2, respectively. The utilization of a tensile-strained GaAs0.67P0.33 buffer layer and GaAs0.85P0.15 barrier layers allows a highly-compressively-strained In0.4Ga0.6As0.995N0.005 QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency (ηinj∼97%).
  • Authors

  • Tansu, N
  • Kirsch, Nicholas
  • Mawst, LJ
  • Status

    Publication Date

  • September 30, 2002
  • Has Subject Area

    Published In

    Digital Object Identifier (doi)

    Start Page

  • 2523
  • End Page

  • 2525
  • Volume

  • 81
  • Issue

  • 14